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学术讲座《电化学腐蚀成像应用,新型隧道磁阻读取器及混合式自旋转移矩磁阻存储器》

浏览量:时间:2025-08-15

活动主题:电化学腐蚀成像应用,新型隧道磁阻读取器及混合式自旋转移矩磁阻存储器

活动类型:学术交流

举办单位:碳中和国际研究中心

活动时间:2025-08-22日 15:00-17:00

活动地点:会议中心2001

面向群体:全院师生

主讲嘉宾:

Dr. Suguo Huo (LCN FIB Lab Head/Electron-Ion Beam Manager since2009) oversees six service-contract-free national facilities (£multi-millionvalue), saving £250k/year while enabling sub-5nm nanofab/characterizationfor 100+ users. With 60+ publications/patents, his postdoc work revealedanomalous magnetic scaling (PRL-published, 170+ cites) and pioneeredartifact-free MFM imaging. PhD research (10 first-author papers) earnedSheffield’s Brunton Medal; MSc work discovered Bloch line chainbreakdown temperature. At Seagate (2000-2009), he spearheaded GMR/TMR reader development, resolved FIB matching issues (40%→90%utilization), and deployed the industry’s first automated TEM for TMRcharacterization.

内容摘要:

Founded in 1826, University College London (UCL) ranks among the UK'stop institutions, where its London Centre for Nanotechnology (LCN) - jointlyoperated with Imperial College and King's College - houses over 200researchers publishing 400+ annual nanotechnology papers. Thispresentation will demonstrate resolution and imaging performance ofnational FIB/SEM and electron beam lithography (EBL) facilities; showcasedislocation density reduction in GaAs/Si substrates from 10⁸ cm⁻²to below10⁷ cm⁻²using Electron Channeling Contrast Imaging (ECCI) on a 20-year-old Zeiss XB1540; and introduce two patents: a balanced-SAF-free-layertunneling magnetoresistance (TMR) reader for detecting magnetic signalsat adjacent perpendicular bit boundaries, and a hybrid in-plane/perpendicular STT-MRAM incorporating auxiliary spin-transfer torquefor 2-bit high-density magnetic storage.

联系人:碳中和国际研究中心索鹏

编辑:袁晓慧